SM8H14CAS-AU_R2_007A1 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 15.6÷17.2V; 284A; bidirectional; DO218AB; SM8H
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 284A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SM8H
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 15.6÷17.2V; 284A; bidirectional; DO218AB; SM8H
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 284A
Semiconductor structure: bidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SM8H
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Технічний опис SM8H14CAS-AU_R2_007A1 PanJit Semiconductor
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 6.6kW; 15.6÷17.2V; 284A; bidirectional; DO218AB; SM8H, Type of diode: TVS, Peak pulse power dissipation: 6.6kW, Max. off-state voltage: 14V, Breakdown voltage: 15.6...17.2V, Max. forward impulse current: 284A, Semiconductor structure: bidirectional, Case: DO218AB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Application: automotive industry, Manufacturer series: SM8H.