Продукція > INFINEON TECHNOLOGIES > SMBT3904PNE6327HTSA1
SMBT3904PNE6327HTSA1

SMBT3904PNE6327HTSA1 Infineon Technologies


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Виробник: Infineon Technologies
Description: TRANS NPN/PNP 40V PG-SOT363-PO
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 250mW
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Технічний опис SMBT3904PNE6327HTSA1 Infineon Technologies

Description: TRANS NPN/PNP 40V PG-SOT363-PO, Operating Temperature: 150°C (TJ), Transistor Type: 1 NPN, 1 PNP, Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Supplier Device Package: PG-SOT363-PO, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Voltage - Collector Emitter Breakdown (Max): 40V, Current - Collector (Ic) (Max): 200mA, Power - Max: 250mW.