SMBTA64E6327 Infineon Technologies
Виробник: Infineon TechnologiesDescription: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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Технічний опис SMBTA64E6327 Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V, Frequency - Transition: 125MHz, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 330 mW.
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SMBTA64E6327 | Виробник : Infineon Technologies |
Description: TRANS PNP DARL 30V 0.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
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