SPB42N03S2L-13 G Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 42A TO263-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 37µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
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Технічний опис SPB42N03S2L-13 G Infineon Technologies
Description: MOSFET N-CH 30V 42A TO263-3, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2V @ 37µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc).