SPP10N10L Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A TO220-3
Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 21µA
Power Dissipation (Max): 50W (Tc)
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Технічний опис SPP10N10L Infineon Technologies
Description: MOSFET N-CH 100V 10.3A TO220-3, Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 2V @ 21µA, Power Dissipation (Max): 50W (Tc).