Технічний опис SPP24N60CFD Infineon technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 15.4A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.2mA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V.
Інші пропозиції SPP24N60CFD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SPP24N60CFD | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 600V 21.7A Automotive 3-Pin(3+Tab) TO-220 Tube |
товару немає в наявності |
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SPP24N60CFD | Виробник : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 15.4A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.2mA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V |
товару немає в наявності |