SR510HB0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A DO201AD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 100 V
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Технічний опис SR510HB0G Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A DO201AD, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 100 µA @ 100 V, Voltage Coupled to Current - Reverse Leakage @ Vr: 100, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 5A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Bulk, Voltage - DC Reverse (Vr) (Max): 100 V.