SS1F4-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AB
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Технічний опис SS1F4-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AB, Current - Reverse Leakage @ Vr: 150 µA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 85pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Інші пропозиції SS1F4-M3/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SS1F4-M3/I | Виробник : Vishay General Semiconductor |
Schottky Diodes & Rectifiers 1A,40V,SMF SCHOTTKY RECT |
товару немає в наявності |