SS2FL3-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO219AB
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Технічний опис SS2FL3-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO219AB, Current - Reverse Leakage @ Vr: 200 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 145pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Інші пропозиції SS2FL3-M3/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SS2FL3-M3/I | Виробник : Vishay General Semiconductor |
Schottky Diodes & Rectifiers If 2A Vrrm 30V DO-219AB Ifsm 50A |
товару немає в наявності |