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SS36HM6G

SS36HM6G Taiwan Semiconductor Corporation

SS32%20SERIES_P2312.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 60V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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Технічний опис SS36HM6G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 60V 3A DO214AB, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 60 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 500 µA @ 60 V.