Технічний опис SS3H10HE3/9AT Vishay
Description: DIODE SCHOTTKY 100V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A, Current - Reverse Leakage @ Vr: 20 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції SS3H10HE3/9AT
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SS3H10HE3/9AT | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 100V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 100 V Qualification: AEC-Q101 |
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SS3H10HE3/9AT | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 100 V Qualification: AEC-Q101 |
товар відсутній |