SSM3J108TU(TE85L) Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 1.8A UFM, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Obsolete, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 158mOhm @ 800mA, 4V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V.