SSM3J306T(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.4A TSM
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSM
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис SSM3J306T(TE85L,F) Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.4A TSM, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 15 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSM, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).