SSM6P16FE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 20V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: ES6
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
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Технічний опис SSM6P16FE(TE85L,F) Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A ES6, Packaging: Cut Tape (CT), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: ES6, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V.