STF120NF10 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 41A TO220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Технічний опис STF120NF10 STMicroelectronics
Description: MOSFET N-CH 100V 41A TO220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.