STF6N52K3 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 3+ | 130.90 грн |
| 10+ | 104.54 грн |
| 100+ | 83.19 грн |
| 500+ | 66.06 грн |
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Технічний опис STF6N52K3 STMicroelectronics
Description: MOSFET N-CH 525V 5A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 525 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.