Технічний опис STF8NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 7A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V.
Інші пропозиції STF8NM60ND
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STF8NM60ND | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube |
товару немає в наявності |
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| STF8NM60ND | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube |
товару немає в наявності |
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STF8NM60ND | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 7A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V |
товару немає в наявності |