STFI8N80K5 STMicroelectronics

Description: MOSFET N-CH 800V 6A I2PAKFP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I2PAK, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-281 (I2PAKFP), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V.