STGD3NB60HDT4

STGD3NB60HDT4 STMicroelectronics


STGD3NB60HD.pdf
Виробник: STMicroelectronics
Description: IGBT 600V 10A 50W DPAK
Power - Max: 50 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Gate Charge: 21 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 33µJ (off)
Td (on/off) @ 25°C: 5ns/53ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис STGD3NB60HDT4 STMicroelectronics

Description: IGBT 600V 10A 50W DPAK, Power - Max: 50 W, Current - Collector Pulsed (Icm): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 10 A, Part Status: Obsolete, Gate Charge: 21 nC, Test Condition: 480V, 3A, 10Ohm, 15V, Switching Energy: 33µJ (off), Td (on/off) @ 25°C: 5ns/53ns, Supplier Device Package: DPAK, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Reverse Recovery Time (trr): 95 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).