STGWT38IH130D

STGWT38IH130D STMicroelectronics


STGW%28T%2938IH130D.pdf
Виробник: STMicroelectronics
Description: IGBT 1300V 63A TO-3P
Power - Max: 250 W
Current - Collector Pulsed (Icm): 125 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector (Ic) (Max): 63 A
Gate Charge: 127 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 3.4mJ (off)
Td (on/off) @ 25°C: -/284ns
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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Технічний опис STGWT38IH130D STMicroelectronics

Description: IGBT 1300V 63A TO-3P, Power - Max: 250 W, Current - Collector Pulsed (Icm): 125 A, Voltage - Collector Emitter Breakdown (Max): 1300 V, Current - Collector (Ic) (Max): 63 A, Gate Charge: 127 nC, Test Condition: 960V, 20A, 10Ohm, 15V, Switching Energy: 3.4mJ (off), Td (on/off) @ 25°C: -/284ns, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.

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STGWT38IH130D STGWT38IH130D Виробник : STMicroelectronics CD00234570-491000.pdf IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
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