STI400N4F6 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 377 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 368.39 грн |
| 50+ | 280.89 грн |
| 100+ | 240.75 грн |
| 500+ | 200.83 грн |
| 1000+ | 171.96 грн |
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Технічний опис STI400N4F6 STMicroelectronics
Description: MOSFET N-CH 40V 120A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 377 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262 (I2PAK), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.