Технічний опис STTH4R02 STMicroelectronics
Description: DIODE GEN PURP 200V 4A DO201AB, Packaging: Tape & Box (TB), Package / Case: DO-201AB, DO-32, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: DO-201AB, Operating Temperature - Junction: 175°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A, Current - Reverse Leakage @ Vr: 3 µA @ 200 V.
Інші пропозиції STTH4R02
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STTH4R02 | Виробник : STMicroelectronics |
 Description: DIODE GEN PURP 200V 4A DO201ABPackaging: Tape & Box (TB) Package / Case: DO-201AB, DO-32, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AB Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
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STTH4R02 | Виробник : STMicroelectronics |
Description: DIODE GEN PURP 200V 4A DO201AB Packaging: Cut Tape (CT) Package / Case: DO-201AB, DO-32, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AB Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
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STTH4R02 | Виробник : STMicroelectronics |
Rectifiers Recovery Diode Ultra Fast |
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