STY80NM60N STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 74A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 447W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис STY80NM60N STMicroelectronics
Description: MOSFET N-CH 600V 74A MAX247, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: MAX247™, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 447W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції STY80NM60N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STY80NM60N | Виробник : STMicroelectronics |
MOSFETs N-channel 600 V, 74A Power II Mdmesh |
товару немає в наявності |