Технічний опис STY80NM60N STMicroelectronics
Description: MOSFET N-CH 600V 74A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V, Power Dissipation (Max): 447W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MAX247™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V.
Інші пропозиції STY80NM60N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STY80NM60N | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 600V 74A 3-Pin(3+Tab) Max247 Tube |
товару немає в наявності |
||
 |
STY80NM60N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 74A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V Power Dissipation (Max): 447W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MAX247™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V |
товару немає в наявності |
|
 |
STY80NM60N | Виробник : STMicroelectronics |
MOSFET N-channel 600 V, 74A Power II Mdmesh |
товару немає в наявності |