Технічний опис TB100EP WeEn Semiconductors
Description: TRANS NPN 700V 1A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C, Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 750mA, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 100mA, 5V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 700 V, Power - Max: 2 W.
Інші пропозиції TB100EP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| TB100EP | Виробник : WeEn Semiconductors |
 Description: TRANS NPN 700V 1A TO92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 750mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 100mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 700 V Power - Max: 2 W |
товару немає в наявності |
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| TB100EP | Виробник : WeEn Semiconductors |
RF Bipolar Transistors TB100/TO-92/STANDARD MARKING * |
товару немає в наявності |