TC7SZ00FE,LM Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP ESV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Supplier Device Package: ESV
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 18+ | 17.83 грн |
| 25+ | 14.63 грн |
| 100+ | 10.27 грн |
| 250+ | 8.57 грн |
| 500+ | 7.52 грн |
| 1000+ | 6.53 грн |
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Технічний опис TC7SZ00FE,LM Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP ESV, Current - Quiescent (Max): 2 µA, Number of Circuits: 1, Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF, Supplier Device Package: ESV, Number of Inputs: 2, Current - Output High, Low: 32mA, 32mA, Voltage - Supply: 1.65V ~ 5.5V, Operating Temperature: -40°C ~ 85°C, Logic Type: NAND Gate, Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Cut Tape (CT).