Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK190E60Z1,S1X
TK190E60Z1,S1X

TK190E60Z1,S1X Toshiba Semiconductor and Storage

TK190E60Z1_datasheet_en_20250730.pdf?did=162283&prodName=TK190E60Z1 Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.190 OHM TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 14 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.44 грн
10+158.67 грн
50+137.58 грн
100+122.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис TK190E60Z1,S1X Toshiba Semiconductor and Storage

Description: N-CH MOSFET 600 V 0.190 OHM TO-2, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 480µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 14 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V.