TP44220HB Tagore Technology
Виробник: Tagore TechnologyDescription: GANFET 2N-CH 650V 30QFN
Packaging: Tray
Package / Case: 30-PowerWFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: 30-QFN (8x10)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 400V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 6V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 302.02 грн |
| 10+ | 251.53 грн |
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Технічний опис TP44220HB Tagore Technology
Description: GANFET 2N-CH 650V 30QFN, Packaging: Tray, Package / Case: 30-PowerWFQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V, Vgs(th) (Max) @ Id: 2.5V @ 5.5mA, Supplier Device Package: 30-QFN (8x10), Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 400V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 6V.