TP44440HB Tagore Technology
Виробник: Tagore TechnologyDescription: GANFET 2N-CH 650V 30QFN
Packaging: Tray
Package / Case: 30-PowerWFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 400V
Rds On (Max) @ Id, Vgs: 472mOhm @ 500mA, 6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 6V
Vgs(th) (Max) @ Id: 2.5V @ 2.8mA
Supplier Device Package: 30-QFN (8x10)
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 226.81 грн |
| 10+ | 188.67 грн |
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Технічний опис TP44440HB Tagore Technology
Description: GANFET 2N-CH 650V 30QFN, Packaging: Tray, Package / Case: 30-PowerWFQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 400V, Rds On (Max) @ Id, Vgs: 472mOhm @ 500mA, 6V, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 6V, Vgs(th) (Max) @ Id: 2.5V @ 2.8mA, Supplier Device Package: 30-QFN (8x10).