TPC8021-H(TE12LQ,M Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 11A 8SOP, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOP (5.5x6.0), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width).