TPC8032-H(TE12LQM) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис TPC8032-H(TE12LQM) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-SOP (5.5x6.0), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).