TPC8207(TE12L,Q) Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 6A 8SOP, Supplier Device Package: 8-SOP (5.5x6.0), Vgs(th) (Max) @ Id: 1.2V @ 200µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V, Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V, Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 450mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).