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TPCC8009,LQ(O

TPCC8009,LQ(O Toshiba Semiconductor and Storage

Mosfets_Prod_Guide.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 24A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 3V @ 200µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис TPCC8009,LQ(O Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 24A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-TSON Advance (3.1x3.1), Vgs(th) (Max) @ Id: 3V @ 200µA, Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).