TPCP8203(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 40V 4.7A PS-8
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C: 4.7A
Drain to Source Voltage (Vdss): 40V
Power - Max: 360mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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Технічний опис TPCP8203(TE85L,F) Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 40V 4.7A PS-8, Supplier Device Package: PS-8 (2.9x2.4), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Current - Continuous Drain (Id) @ 25°C: 4.7A, Drain to Source Voltage (Vdss): 40V, Power - Max: 360mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).