TPCP8401(TE85L,F) Toshiba Semiconductor and Storage

Description: MOSFET N/P-CH 20V/12V PS-8, Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A, Drain to Source Voltage (Vdss): 20V, 12V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Supplier Device Package: PS-8 (2.9x2.4), Vgs(th) (Max) @ Id: 1.1V @ 100µA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V.