TPH3206LDB Transphorm

Description: GANFET N-CH 650V 16A PQFN, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 4-PQFN (8x8), Vgs(th) (Max) @ Id: 2.6V @ 500µA, Power Dissipation (Max): 81W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerDFN, Packaging: Tube.