TPH3208LDG Renesas Electronics Corporation

Description: GANFET N-CH 650V 20A 3PQFN, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 3-PQFN (8x8), Vgs(th) (Max) @ Id: 2.6V @ 300µA, Power Dissipation (Max): 96W (Tc), Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-PowerDFN, Packaging: Tube, Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V.