TSM035NB04LCZ C0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 157A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.09 грн |
| 10+ | 94.93 грн |
| 100+ | 64.67 грн |
| 500+ | 48.55 грн |
| 1000+ | 44.65 грн |
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Технічний опис TSM035NB04LCZ C0G Taiwan Semiconductor Corporation
Description: 40V, 157A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V.
Інші пропозиції TSM035NB04LCZ C0G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TSM035NB04LCZ C0G | Taiwan Semiconductor |
MOSFETs 40V, 157A, Single N-Channel Power MOSFET |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
 |
TSM035NB04LCZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 157A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM035NB04LCZ C0G |
|
Виробник: Taiwan Semiconductor
MOSFETs 40V, 157A, Single N-Channel Power MOSFET
MOSFETs 40V, 157A, Single N-Channel Power MOSFET
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TSM035NB04LCZ C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 157A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.