TSM4ND65CI Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 4A ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V
Description: MOSFET N-CH 650V 4A ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V
на замовлення 1845 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 192.59 грн |
| 50+ | 148.53 грн |
| 100+ | 122.21 грн |
| 500+ | 97.04 грн |
| 1000+ | 82.34 грн |
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Технічний опис TSM4ND65CI Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 4A ITO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 41.6W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: ITO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V.