TSM60NC620CH C5G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.78 грн |
| 10+ | 89.18 грн |
| 100+ | 70.98 грн |
| 500+ | 56.37 грн |
| 1000+ | 47.83 грн |
| 2000+ | 45.43 грн |
| 5000+ | 43.01 грн |
Відгуки про товар
Написати відгук
Технічний опис TSM60NC620CH C5G Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V.