TSM7N65ACI C0G Taiwan Semiconductor

Description: MOSFET N-CH 650V 7A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 25 V.