UES1002/TR Microchip Technology

Description: DIODE GEN PURP 100V 1A, Packaging: Tape & Reel (TR), Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.