UFR3120PF Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Description: DIODE GEN PURP 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
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Технічний опис UFR3120PF Microchip Technology
Description: DIODE GEN PURP 200V 30A DO4, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 115pF @ 10V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: DO-4 (DO-203AA), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A, Current - Reverse Leakage @ Vr: 15 µA @ 200 V.
Інші пропозиції UFR3120PF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| UFR3120PF | Виробник : Microchip Technology | Rectifiers |
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