ULN2004AFWG,N,E Toshiba Semiconductor and Storage

Description: TRANS 7NPN DARL 50V 500MA 16SOL, Operating Temperature: -40°C ~ 85°C (TA), Transistor Type: 7 NPN Darlington, Mounting Type: Surface Mount, Package / Case: 16-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT), Part Status: Active, Supplier Device Package: 16-SOL, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 500mA, Power - Max: 1.25W.