Продукція > RENESAS ELECTRONICS CORPORATION > UPA1814GR-9JG-E1-A
UPA1814GR-9JG-E1-A

UPA1814GR-9JG-E1-A Renesas Electronics Corporation

upa1814-data-sheet
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 8-TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис UPA1814GR-9JG-E1-A Renesas Electronics Corporation

Description: MOSFET P-CH 30V 8-TSSOP, Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Rds On (Max) @ Id, Vgs: 16mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).