UPA2211T1M-T1-AT Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 12V 7.5A 8VSOF
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Supplier Device Package: 8-VSOF
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Технічний опис UPA2211T1M-T1-AT Renesas Electronics Corporation
Description: MOSFET P-CH 12V 7.5A 8VSOF, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Supplier Device Package: 8-VSOF.