UPA2211T1M-T1-AT Renesas Electronics Corporation


RNCCS04994-1.pdf?t.download=true&u=5oefqw Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 12V 7.5A 8VSOF
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-VSOF
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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термін постачання 21-31 дні (днів)
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369+58.70 грн
Мінімальне замовлення: 369
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Технічний опис UPA2211T1M-T1-AT Renesas Electronics Corporation

Description: MOSFET P-CH 12V 7.5A 8VSOF, Packaging: Bulk, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-VSOF, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V.