UPA2600T1R-E2-AX Renesas Electronics Corporation

Description: MOSFET N-CH 20V 7A 6HUSON, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 6-HUSON (2x2), Power Dissipation (Max): 2.4W (Ta), Rds On (Max) @ Id, Vgs: 19.1mOhm @ 3.5A, 2.5V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WFDFN Exposed Pad, Packaging: Tape & Reel (TR).