UPA2716AGR-E1-AT Renesas Electronics America Inc
Виробник: Renesas Electronics America IncDescription: MOSFET P-CH 30V 14A 8PSOP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-PSOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
на замовлення 6963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 313+ | 77.09 грн |
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Технічний опис UPA2716AGR-E1-AT Renesas Electronics America Inc
Description: MOSFET P-CH 30V 14A 8PSOP, Packaging: Bulk, Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 7A, 10V, Power Dissipation (Max): 2W (Ta), Supplier Device Package: 8-PSOP, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V.