UPA2810T1L-E2-AY Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET P-CH 30V 13A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 276+ | 85.27 грн |
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Технічний опис UPA2810T1L-E2-AY Renesas Electronics America Inc
Description: MOSFET P-CH 30V 13A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-DFN3333 (3.3x3.3), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Bulk.