UPA621TT-E1-A Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 20V 5A 6WSOF
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 6-WSOF
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
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Технічний опис UPA621TT-E1-A Renesas Electronics Corporation
Description: MOSFET N-CH 20V 5A 6WSOF, Package / Case: 6-SMD, Flat Leads, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: 6-WSOF, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount.