V15PM6HM3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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Технічний опис V15PM6HM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO277A, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V, Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A, Voltage - DC Reverse (Vr) (Max): 60 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 15A, Capacitance @ Vr, F: 2300pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount.